The ramping of chip manufacture on 300mm wafers and the move to ever small device design rules (130 nm and below) means the requirements on semiconductor manufacturing equipment are more stringent than ever. This means that each system component needs to be chosen carefully. AlN has excellently balanced properties for semiconductors equipment applications. These properties include excellent thermal conductivity, heat radiation and resistivity thermal shock tolerance and good insulating characteristics making this material an ideal match for cutting edge semiconductor capital equipment.



Features AIN Materials AlN
FAN-170 FAN-200 FAN-090
熱伝導率 W/m·K(RT) 170 200 90
Heat radiation (100ºC) 0.93 0.93 0.93
Thermal Expansion Coefficient 10-6/ºC(RT~400ºC) 4.5 4.5 4.5
Volume Resistively Ω·cm(RT) >1013 >1013 >1013
Dielectric Strength kV/mm(RT) 15 15 15
Dielectric Constant (1MHz) 8.8 8.8 8.8
Dielectric Loss 10-4(1MHz) 5 5 5
Bending Strength kgf/mm2 35 35 35
Density g/cm3 3.32 3.32 3.23
Y % 3.5 3.3 0
O % 1.5 1.2 0.58
Total Metal Impurities ppm <500 <500 <500
Features Standard High Thermal Conductivity High Purity (Sintering Aidless)


  • High Thermal Conductivity and Heat Radiation, Excellent Thermal Uniformity
  • High Thermal Shock Resistance
  • Best Mach for Si wafer with Low Thermal Expansion.
  • High resistance to fluorine corrosion
  • High resistivity to for Plasma


  • Semiconductor Equipment (CVD,Etching) Susceptor, electrostatic chucks, Vacuum Chuck, Heater
  • Dummy Wafer
  • Sputtering Targets


Size (Max)φ/□550mm)
Thickness 0.25to30(mm)


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