AIN Substrates

Features

		AlN
		FAN-170 (Standard)	FAN-200 (High Thermal Conductivity)
Thermal Conductivity	W/m·K(RT)	170	200
Heat radiation	(100ºC)	0.93
Thermal Expansion Coefficient	10-6/ºC(RT～400ºC)	4.5
Volume Resistively	Ω·cm(RT)	>1013
Dielectric Strength	kV/mm(RT)	15
Dielectric Constant	(1MHz)	8.8
Dielectric Loss	104(1MHz)	5
Bending Strength	kgf/mm2	35
Density	g/cm3	3.3
Y	wt%	3.5
Impurities (Representative Value)	ppm	Total < 500 C=150 , Fe=13 , Si=50 , Ca=170 , Mg=10 , Ti=10 Cr<1.7 , Cu<1.9 , Ni<6.6 , Na<5

Features

• High Thermal Conductivity and Heat Radiation, Excellent Thermal Uniformity.
• Best Mach for Si wafer with Low Thermal Expansion.
• High resistivity to thermal shock.
• Various metallization possible

Specifications

Substrate Size	（MAXj）□200 (mm)
Thickness	0.25～1（mm）
Surface Roughness	Ra ≦ 0.8 (μm)
Laser process	適宜対応可